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BRP400-DDT BRP400-DDT-C
Autonics
Autonics BRP400-DDT BRP400-DDT-C Diffuse reflective Photoelectric Switch
Features
BR Series
BR-C SERIES
Cylindrical type
Upgraded cylindrical (∅18mm) type
PHOTO SENSOR
PHOTO SWITCH
PHOTOELECTRIC SENSOR
1. High-speed response time under 1ms
2. Excellent environment-resistance performance with glass lens (BR4M)
3. Built-in reverse power polarity and short-circuit (overcurrent) protection circuit
4. Realizes long installation distance (20m) (Through-beam type)
5. External sensitivity adjustment (Except Through-beam type)
6. Superior noise resistance with digital signal processing
7. Suitable for sensing in narrow space (Narrow beam type)
8. Protection structure IP66 (IEC standard)
9. Light ON, Dark ON switchable by control wire (Except Through-beam type)
Order Code
Specification
| MODEL | NPN | BRP100-DDT | BR100-DDT | BRP400-DDT | BR400-DDT | BRP200-DDTN | BR200-DDTN | BRP3M-MDT | BR3M-MDT | BR4M-TDTD | BR4M-TDTL | BR20M-TDTD | BR20M-TDTL |
| BRP100-DDT-C | BR100-DDT-C | BRP400-DDT-C | BR400-DDT-P | BRP200-DDTN-C | BR200-DDTN-C | BRP3M-MDT-C | BR3M-MDT-C | BR4M-TDTD-C | BR4M-TDTL-C | BR20M-TDTD-C | BR20M-TDTL-C | ||
| PNP | BRP100-DDT-P | BR100-DDT-P | BRP400-DDT-P | BR400-DDT-C | BRP200-DDTN-P | BR200-DDTN-P | BRP3M-MDT-P | BR3M-MDT-P | BR4M-TDTD-P | BR4M-TDTL-P | BR20M-TDTD-P | BR20M-TDTL-P | |
| BRP100-DDT-C-P | BR100-DDT-C-P | BRP400-DDT-C-P | BR400-DDT-C-P | BRP200-DDTN-C-P | BR200-DDTN-C-P | BRP3M-MDT-C-P | BR3M-MDT-C-P | BR4M-TDTD-C-P | BR4M-TDTL-C-P | BR20M-TDTD-C-P | BR20M-TDTL-C-P | ||
| Sensing Type | Diffuse reflective | Narrow beam reflective | Retroreflective | Through-beam | |||||||||
| Sensing Distance | 100 mm | 400 mm | 200 mm | 3 m | 4 m | 20 m | |||||||
| Sensing Target | Translucent, Opaque materials | Opaque materials of min. Ø60mm | Opaque materials ofmin. Ø15mm | ||||||||||
| Power Supply | 12-24VDC ±10%(Ripple P-P : Max. 10%) | ||||||||||||
Autonics BRP400-DDT BRP400-DDT-C Diffuse reflective Photoelectric Switch
Features
BR Series
BR-C SERIES
Cylindrical type
Upgraded cylindrical (∅18mm) type
PHOTO SENSOR
PHOTO SWITCH
PHOTOELECTRIC SENSOR
1. High-speed response time under 1ms
2. Excellent environment-resistance performance with glass lens (BR4M)
3. Built-in reverse power polarity and short-circuit (overcurrent) protection circuit
4. Realizes long installation distance (20m) (Through-beam type)
5. External sensitivity adjustment (Except Through-beam type)
6. Superior noise resistance with digital signal processing
7. Suitable for sensing in narrow space (Narrow beam type)
8. Protection structure IP66 (IEC standard)
9. Light ON, Dark ON switchable by control wire (Except Through-beam type)
Order Code
Specification
| MODEL | NPN | BRP100-DDT | BR100-DDT | BRP400-DDT | BR400-DDT | BRP200-DDTN | BR200-DDTN | BRP3M-MDT | BR3M-MDT | BR4M-TDTD | BR4M-TDTL | BR20M-TDTD | BR20M-TDTL |
| BRP100-DDT-C | BR100-DDT-C | BRP400-DDT-C | BR400-DDT-P | BRP200-DDTN-C | BR200-DDTN-C | BRP3M-MDT-C | BR3M-MDT-C | BR4M-TDTD-C | BR4M-TDTL-C | BR20M-TDTD-C | BR20M-TDTL-C | ||
| PNP | BRP100-DDT-P | BR100-DDT-P | BRP400-DDT-P | BR400-DDT-C | BRP200-DDTN-P | BR200-DDTN-P | BRP3M-MDT-P | BR3M-MDT-P | BR4M-TDTD-P | BR4M-TDTL-P | BR20M-TDTD-P | BR20M-TDTL-P | |
| BRP100-DDT-C-P | BR100-DDT-C-P | BRP400-DDT-C-P | BR400-DDT-C-P | BRP200-DDTN-C-P | BR200-DDTN-C-P | BRP3M-MDT-C-P | BR3M-MDT-C-P | BR4M-TDTD-C-P | BR4M-TDTL-C-P | BR20M-TDTD-C-P | BR20M-TDTL-C-P | ||
| Sensing Type | Diffuse reflective | Narrow beam reflective | Retroreflective | Through-beam | |||||||||
| Sensing Distance | 100 mm | 400 mm | 200 mm | 3 m | 4 m | 20 m | |||||||
| Sensing Target | Translucent, Opaque materials | Opaque materials of min. Ø60mm | Opaque materials ofmin. Ø15mm | ||||||||||
| Power Supply | 12-24VDC ±10%(Ripple P-P : Max. 10%) | ||||||||||||
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