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BR4M-TDTL-P BR4M-TDTL-C-P
Autonics
Autonics BR4M-TDTL-P BR4M-TDTL-C-P PNP open collector output Through-beam Photo Sensor
Features
BR Series
BR-C SERIES
Cylindrical type
Upgraded cylindrical (∅18mm) type
PHOTO SWITCH
PHOTOELECTRIC SENSOR
PHOTO SENSOR
1. Superior noise resistance with digital signal processing
2. Excellent environment-resistance performance with glass lens (BR4M)
3. Light ON, Dark ON switchable by control wire (Except Through-beam type)
4. High-speed response time under 1ms
5. Built-in reverse power polarity and short-circuit (overcurrent) protection circuit
6. Protection structure IP66 (IEC standard)
7. Suitable for sensing in narrow space (Narrow beam type)
8. External sensitivity adjustment (Except Through-beam type)
9. Realizes long installation distance (20m) (Through-beam type)
Order Code
Specification
MODEL | NPN | BRP100-DDT | BR100-DDT | BRP400-DDT | BR400-DDT | BRP200-DDTN | BR200-DDTN | BRP3M-MDT | BR3M-MDT | BR4M-TDTD | BR4M-TDTL | BR20M-TDTD | BR20M-TDTL |
BRP100-DDT-C | BR100-DDT-C | BRP400-DDT-C | BR400-DDT-P | BRP200-DDTN-C | BR200-DDTN-C | BRP3M-MDT-C | BR3M-MDT-C | BR4M-TDTD-C | BR4M-TDTL-C | BR20M-TDTD-C | BR20M-TDTL-C | ||
PNP | BRP100-DDT-P | BR100-DDT-P | BRP400-DDT-P | BR400-DDT-C | BRP200-DDTN-P | BR200-DDTN-P | BRP3M-MDT-P | BR3M-MDT-P | BR4M-TDTD-P | BR4M-TDTL-P | BR20M-TDTD-P | BR20M-TDTL-P | |
BRP100-DDT-C-P | BR100-DDT-C-P | BRP400-DDT-C-P | BR400-DDT-C-P | BRP200-DDTN-C-P | BR200-DDTN-C-P | BRP3M-MDT-C-P | BR3M-MDT-C-P | BR4M-TDTD-C-P | BR4M-TDTL-C-P | BR20M-TDTD-C-P | BR20M-TDTL-C-P | ||
Sensing Type | Diffuse reflective | Narrow beam reflective | Retroreflective | Through-beam | |||||||||
Sensing Distance | 100 mm | 400 mm | 200 mm | 3 m | 4 m | 20 m | |||||||
Sensing Target | Translucent, Opaque materials | Opaque materials of min. Ø60mm | Opaque materials ofmin. Ø15mm | ||||||||||
Power Supply | 12-24VDC ±10%(Ripple P-P : Max. 10%) |
Autonics BR4M-TDTL-P BR4M-TDTL-C-P PNP open collector output Through-beam Photo Sensor
Features
BR Series
BR-C SERIES
Cylindrical type
Upgraded cylindrical (∅18mm) type
PHOTO SWITCH
PHOTOELECTRIC SENSOR
PHOTO SENSOR
1. Superior noise resistance with digital signal processing
2. Excellent environment-resistance performance with glass lens (BR4M)
3. Light ON, Dark ON switchable by control wire (Except Through-beam type)
4. High-speed response time under 1ms
5. Built-in reverse power polarity and short-circuit (overcurrent) protection circuit
6. Protection structure IP66 (IEC standard)
7. Suitable for sensing in narrow space (Narrow beam type)
8. External sensitivity adjustment (Except Through-beam type)
9. Realizes long installation distance (20m) (Through-beam type)
Order Code
Specification
MODEL | NPN | BRP100-DDT | BR100-DDT | BRP400-DDT | BR400-DDT | BRP200-DDTN | BR200-DDTN | BRP3M-MDT | BR3M-MDT | BR4M-TDTD | BR4M-TDTL | BR20M-TDTD | BR20M-TDTL |
BRP100-DDT-C | BR100-DDT-C | BRP400-DDT-C | BR400-DDT-P | BRP200-DDTN-C | BR200-DDTN-C | BRP3M-MDT-C | BR3M-MDT-C | BR4M-TDTD-C | BR4M-TDTL-C | BR20M-TDTD-C | BR20M-TDTL-C | ||
PNP | BRP100-DDT-P | BR100-DDT-P | BRP400-DDT-P | BR400-DDT-C | BRP200-DDTN-P | BR200-DDTN-P | BRP3M-MDT-P | BR3M-MDT-P | BR4M-TDTD-P | BR4M-TDTL-P | BR20M-TDTD-P | BR20M-TDTL-P | |
BRP100-DDT-C-P | BR100-DDT-C-P | BRP400-DDT-C-P | BR400-DDT-C-P | BRP200-DDTN-C-P | BR200-DDTN-C-P | BRP3M-MDT-C-P | BR3M-MDT-C-P | BR4M-TDTD-C-P | BR4M-TDTL-C-P | BR20M-TDTD-C-P | BR20M-TDTL-C-P | ||
Sensing Type | Diffuse reflective | Narrow beam reflective | Retroreflective | Through-beam | |||||||||
Sensing Distance | 100 mm | 400 mm | 200 mm | 3 m | 4 m | 20 m | |||||||
Sensing Target | Translucent, Opaque materials | Opaque materials of min. Ø60mm | Opaque materials ofmin. Ø15mm | ||||||||||
Power Supply | 12-24VDC ±10%(Ripple P-P : Max. 10%) |